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mscoxxxa 10-26-04 dsw um2300 (34989) um2300 features ? lf band (100 khz) pin ? long lifetime (80 s typ.) ? high power (1 kw cw), ? high isolation (35 db) ? low loss (0.2 db), ? very low distortion (ip3 = > 60 dbm) ? voltage ratings to 1000 v description electrical specifications (25 c) test min. typ. max. units conditions diode resistance r s 0.3 0.4 ? f 1 = 1 mhz, 100 ma capacitance c t 15 20 pf f 2 = 1 mhz, 100 v reverse current i r 10 a @ rated voltage carrier lifetime 60 80 s i f = 10 ma / 100 v ip3 50 60 dbm 2 watt total, i f =25 ma f 1 =0.999 mhz, f 2 =1.001 mhz 1.0 watt/ tone thermal resistance 1.0 c / w 25 c stud temperature 0 20 40 60 80 100 120 140 160 180 200 vr (volts) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 ct (pf) typical capacitance vs reverse voltage 4 mhz 2 mhz 1 mhz 400 khz 200 khz 100 khz pin diode switch um2300 series pin diodes are designed for transmit / receive switch and attenuator application in lf band ( 100 khz ) and above. as series configured switches, these long lifetime (80 s typ) diodes can control up to 2.5 kw cw in a 50 ohm system. in mf band, insertion loss is less than 0.2 db and isolation is greater than 35 db (?off ?state). the um2300 series offers the lowest distortion perform- ance in both transmit & receive modes. less than 10 ma forward bias is required to obtain an ip3 of 60 dbm at 150 khz with 1 watt per tone. the forward biased resistance/reactance vs. frequency characteristics are flat down to 10 khz. capacitance vs. reverse bias volt- age characteristic is flat down to 1 mhz. in attenuator configurations, the um2300 produces extremely low distortion at low values of attenuator control current, & very low insertion loss ( 0.2 db) in the ? 0 db ? attenuator state. reverse voltage ( v r ) device @ i r = 10 a 100 volts............ um2301 200 volts............ um2302 400 volts............ um2304 600 volts............ um2306 800 volts............ um2308 1000 volts............ um2310 voltage ratings (25 c)
mscoxxxa 11-10-04 dsw um2300 (34989) um2300 0 100 200 300 400 500 600 700 800 900 1000 vr (volts) -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 ir (a) (mean) typical ir vs vr 150 oc 125 oc 100 oc 75 oc 50 oc 25 oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 vf [volts] -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 if [amperes] typical i-v curve 150 oc 125 oc 100 oc 75 oc 50 oc 25 oc .01 .1 1 10 100 if (ma) .1 1 10 100 1000 rs (ohms) typical rs vs forward bias current 0 10 1 10 2 10 reverse voltage (volts) 3 10 4 10 5 10 6 10 7 10 8 10 9 10 rp (ohms) typical rp vs reverse voltage 10khz 20khz 40khz 100khz 200khz 400khz 1mhz 2mhz 4mhz 10mhz
mscoxxxa 11-10-04 dsw um2300 (34989) um2300 -3 10 -2 10 -1 10 0 10 1 10 if [amperes] -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 tcvf [mv/oc] typical tcvf vs if 125 oc delta 1 10 100 1000 pt - pulse time - (ms) .01 .1 1 10 thermal impedance - (c/w) typical thermal impedance with heatsink no heatsink 110 2345678 if needed to obtain an im3 of - 60 dbc (ma) 15 20 25 30 35 40 power level/tone (dbm) 45 50 55 60 65 70 ip3 (dbm) typical power level vs forward bias current 500khz 250khz 150khz tau = 0.1 ms f1 = f +/- 1 khz f2 = f +/- 1 khz
mscoxxxa 11-10-04 dsw um2300 (34989) um2300 um2300
mscoxxxa 11-10-04 dsw um2300 (34989) um2300 um2300s

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